PART |
Description |
Maker |
PE15A1008 |
23 dBm IP3, 1.6 dB NF, 13 dBm, 20 MHz to 3 GHz, Low Noise Amplifier
|
Pasternack Enterprises, Inc.
|
MAFR-000355-000001 |
Single Junction Drop-In Circulator 2110 MHz-2170 MHz
|
M/A-COM Technology Solutions, Inc.
|
PTF180101 PTF180101S |
LDMOS RF Power Field Effect Transistor 10 W 1805-1880 MHz 1930-1990 MHz 10 W 2110-2170 MHz LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz
|
INFINEON[Infineon Technologies AG]
|
7718N-0026P 7718N-0027 7718N-0025 |
2000 MHz - 8000 MHz RF/MICROWAVE LINEAR DETECTOR, 17 dBm INPUT POWER-MAX 8000 MHz - 18000 MHz RF/MICROWAVE LINEAR DETECTOR, 17 dBm INPUT POWER-MAX 100 MHz - 2000 MHz RF/MICROWAVE LINEAR DETECTOR, 17 dBm INPUT POWER-MAX
|
M/A-COM Technology Solutions, Inc.
|
DS52-0002 DS52-0002-TR DS52-0002-RTR |
Low Cost Two-Way SMT Power Divider 1920- 2170 MHz Low Cost Two-Way SMT Power Divider 1920- 2170 MHz 低成本双向SMT功率分频920170年兆 1920-2170 MHz, Low cost two-way SMT power divider
|
Bel Fuse, Inc. MACOM[Tyco Electronics] MA-Com
|
PE42672 42672-99 42672-00 42672-90 |
SP7T UltraCMOS?/a> 2.75 V Switch 100 - 3000 MHz, 68 dBM IIP3 SP7T UltraCMOS 2.75 V Switch 100 - 3000 MHz, 68 dBM IIP3 SP7T UltraCMOS2.75 V Switch 100 - 3000 MHz, 68 dBM IIP3 SP7T UltraCMOS⑩ 2.75 V Switch 100 - 3000 MHz, 68 dBM IIP3
|
PEREGRINE[Peregrine Semiconductor Corp.]
|
PD21120R6 |
120 Watts, 2110-2170 MHz PD21120R6 PUSH/PULL LATERAL MOSFET 120 Watts, 2110-2170 MHz PUSH/PULL LATERAL MOSFET
|
TRIQUINT SEMICONDUCTOR INC
|
PTF210901 PTF210901E |
LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz LDMOS RF Power Field Effect Transistor 90 W, 2110-2170 MHz
|
INFINEON[Infineon Technologies AG]
|
ACTM1130PM10 ACTM1130NM47 ACTM1130PM47 |
2000 MHz - 4000 MHz RF/MICROWAVE LINEAR DETECTOR, 14 dBm INPUT POWER-MAX
|
|
PTFA210301E |
Thermally-Enhanced High Power RF LDMOS FET 30 W, 2110-2170 MHz
|
Infineon Technologies AG
|
PTFA210701E PTFA210701F |
Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 鈥?2170 MHz
|
Infineon Technologies AG
|